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| LESHAN RADIO COMPANY, LTD. Switching Transistor PNP Silicon 3 COLLECTOR MMBT3640LT1 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO 1 2 Value -12 -12 -4.0 -80 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBT3640LT1 = 2J ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -100 Adc, V BE = 0) Collector-Emitter Sustaining Voltage(1 ) (I C = -10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -100 Adc, I E = 0) Emitter-Base Breakdown Voltage (I E = -100 Adc, I C = 0) Collector Cutoff Current ( V CE = -6.0Vdc, V BE = 0) ( V CE = -6.0Vdc, V BE = 0, T A= 65C) Base Current Current ( V CE = -6.0Vdc, V EB = 0 ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CES V V V -12 -12 -12 -4.0 -- -- -- -- Vdc Vdc Vdc Vdc Adc -- -- -- -0.01 -1.0 -10 CEO(sus) (BR)CBO (BR)EBO I CES IB nAdc O10-1/3 LESHAN RADIO COMPANY, LTD. MMBT3640LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 30 20 VCE(sat) -- -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = -10mAdc, V CE = -0.3 Vdc) (I C = -50mAdc, V CE = -1.0 Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0 mAdc) (I C = -50 mAdc, I B = -5.0 mAdc) (I C = -10 mAdc, I B = -1.0 mAdc, T A=65C ) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -0.5 mAdc) (I C = -10mAdc, I B = -1.0 mAdc) (I C = -50mAdc, I B = -5.0 mAdc) 120 -- Vdc -0.2 -0.6 -0.25 Vdc -0.75 -0.8 -- -0.95 -1.0 -1.5 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(3),(4) (I C = -10mAdc, V CE= -5.0Vdc, f = 100MHz) Output Capacitance (V CB = -5.0Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = -0.5Vdc, I C = 0, f = 1.0 MHz) fT C obo C ibo 500 -- -- -- 3.5 3.5 MHz pF pF SWITCHING CHARACTERISTICS Delay Time (V CC = -6.0 Vdc,V EB(off)=-1.9Vdc, Rise Time I C = -50 mAdc, I B1 = -5.0 mAdc) Storage Time (V CC = -6.0 Vdc, Fall Time I C = -50 mAdc,I B1 = I B2 = -5.0 mAdc) Turn-On Time (V CC = -6.0 Vdc, I C = -50 mAdc, V EB(off)=-1.9Vdc,I B1 = -5.0 mAdc) (V CC = -1.5 Vdc, I C = -10 mAdc, I B1 = -5.0 mAdc) Turn-Off Time (V CC = -6.0 Vdc, I C = -50 mAdc, V EB(off)=-1.9Vdc, I B1 = I B2 = -5.0 mAdc) (V CC = -1.5 Vdc, I C = -10 mAdc, I B1 = I B2 = -0.5 mAdc) 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. td tr ts tf t on -- -- -- -- -- -- t off -- -- 35 75 10 30 20 12 25 60 ns ns ns ns ns ns V BB = -6.0 V V BB = +1.9 V V CC= -6.0 V 1.0 k 0.1 F 0 -6.8 V V in 680 TO SAMPLING SCOPE INPUT Z > 100 k RISE TIME < 1.0 ns 110 V out 0 5.0 V 0.1 mF V in 51 PULSE SOURCE RISE TIME < 1.0 ns PULSE WIDTH > 200 ns Z in = 50 OHMS FALL TIME < 1.0 ns 5.0 k 5.0 k V CC = 1.5 V 130 V out 51 PULSE SOURCE RISE TIME < 1.0 ns PULSE WIDTH >100 ns NOTES: Collector Current = 50 mA, NOTES: Turn-On and Turn-Off Time Z in = 50 OHMS NOTES: Base Currents = 5.0 mA. FALL TIME < 1.0 ns Figure 1. TO SAMPLING SCOPE INPUT Z >100 k RISE TIME < 1.0 ns NOTES: Collector Current = 10 mA, NOTES: Turn-On and Turn-Off Time NOTES: Base Currents = 0.5 mA. Figure 2. O10-2/3 LESHAN RADIO COMPANY, LTD. MMBT3640LT1 200 -1.4 V CE = -1.0 V h FE, DC CURRENT GAIN T J = 25C -1.2 V, VOLTAGE (VOLTS) 100 70 50 T J = 125C 25C -55C -1.0 -0.8 V BE(sat) @ I C /I B = 10 V BE(on) @ V CE = -1.0 V -0.6 -0.4 -0.2 30 20 V CE(sat) @ I C /I B = 10 10 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. DC Current Gain V , TEMPERATURE COEFFICIENT (mV/ C) Figure 4. "On" Voltages V CE, COLLECTOR- EMITTER VOLTAGE (VOLTS) -1.0 +0.5 T J = 25C -0.8 *APPLIES FOR I C /I B I C = -1.0 mA -5.0mA -20 mA -80 mA R VC for V CE(sat) -55C to 25C -0.6 -0.5 -0.4 -1.0 -0.2 -1.5 25C to 125C R VB for V BE -55C to 25C -1.0 -2.0 -5.0 -10 -20 -50 -100 0 -0.01-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -2.0 -0.1 -0.2 -0.5 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Collector Saturation Region Figure 6. Temperature Coefficients f T, CURRENT -GAIN -BANDWIDTH PRODUCT(MHz) 2000 5.0 T J = 25C f = 100 MHz 1000 800 600 400 T J = 25C V CE = -10 V 3.0 C, CAPACITANCE (pF) -1.0 V 2.0 C obo C ibo 1.0 0.7 0.5 -0.2 -0.3 200 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 7. Current-Gain -- Bandwidth Product Figure 8. Capacitance O10-3/3 |
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